CSD19538Q2 Datasheet دیتاشیت

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مشاهده دیتاشیت CSD19538Q2 Datasheet	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD19538Q2T
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.5W;20.2W
Total Gate Charge (Qg@Vgs): 5.6nC@10V
Drain Source Voltage (Vdss): 100V
Input Capacitance (Ciss@Vds): 454pF@50V
Continuous Drain Current (Id): 13.1A
Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 59mΩ@5A,10V
Package: WSON-6(2x2)
Manufacturer: Texas Instruments
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Drain to Source Voltage (Vdss): 100V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Vgs (Max): ±20V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 50V
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
Supplier Device Package: 6-WSON (2x2)
Mounting Type: Surface Mount
Base Part Number: CSD19538
detail: N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)